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Facile fabrication of efficient organic CMOS circuits
Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik. (The Organic Photonics and Electronics Group)
Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik. (The Organic Photonics and Electronics Group)
Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik. (The Organic Photonics and Electronics Group)
2010 (engelsk)Inngår i: Journal of Physical Chemistry B, ISSN 1520-6106, E-ISSN 1520-5207, Vol. 114, nr 1, s. 135-140Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Organic electronic circuits based on a combination of n- and p-type transistors (so-called CMOS circuits) are attractive, since they promise the realization of a manifold of versatile and low-cost electronic devices. Here, we report a novel photoinduced transformation method, which allows for a particularly straightforward fabrication of highly functional organic CMOS circuits. A solution-deposited single-layer film, comprising a mixture of the n-type semiconductor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and the p-type semiconductor poly-3-hexylthiophene (P3HT) in a 3:1 mass ratio, was utilized as the common active material in an array of transistors. Selected film areas were exposed to laser light, with the result that the irradiated PCBM monomers were photochemically transformed into a low-solubility and high-mobility dimeric state. Thereafter, the entire film was developed via immersion into a developer solution, which selectively removed the nonexposed, and monomeric, PCBM component. The end result was that the transistors in the exposed film areas are n-type, as dimeric PCBM is the majority component in the active material, while the transistors in the nonexposed film areas are p-type, as P3HT is the sole remaining material. We demonstrate the merit of the method by utilizing the resulting combination of n-type and p-type transistors for the realization of CMOS inverters with a high gain of ∼35.

sted, utgiver, år, opplag, sider
American Chemical Society (ACS), 2010. Vol. 114, nr 1, s. 135-140
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URN: urn:nbn:se:umu:diva-30613DOI: 10.1021/jp909216aISI: 000273404500018PubMedID: 20055524OAI: oai:DiVA.org:umu-30613DiVA, id: diva2:284921
Tilgjengelig fra: 2010-01-08 Laget: 2010-01-08 Sist oppdatert: 2018-06-08bibliografisk kontrollert

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