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Effect of interface roughness on acoustic loss in tunable thin film bulk acoustic wave resonators
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2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 2Article in journal (Refereed) Published
Abstract [en]

Tunable 5.2 GHz bulk acoustic wave resonators utilizing Ba(x)Sr(1-x)TiO(3) ferroelectric films with similar intrinsic properties but different interface roughness are fabricated and characterized. Increase in roughness from 3.2 nm up to 6.9 nm results in reduction in Q-factor from 350 down to 150 due to extrinsic acoustic losses caused by wave scattering at reflections from rough interfaces and other mechanisms associated with roughness. The increased roughness is a result of distortion of Pt bottom electrode caused by formation of heterogeneous enclosures of TiO(2-x) in the Pt layer. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3610513]

Place, publisher, year, edition, pages
2011. Vol. 110, no 2
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Materials Engineering
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URN: urn:nbn:se:umu:diva-140836OAI: oai:DiVA.org:umu-140836DiVA, id: diva2:1150774
Available from: 2017-10-19 Created: 2017-10-19 Last updated: 2018-06-09

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Berge, John

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