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Photo-induced and resist-free imprint patterning of fullerene materials for use in functional electronics
Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik. (Condensed Matter, Nanostructured Carbon)
Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik. (Organic Electronics)
2009 (Engelska)Ingår i: Journal of the American Chemical Society, ISSN 0002-7863, E-ISSN 1520-5126, Vol. 131, nr 11, s. 4006-4011Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

We report a novel and potentially generic method for the efficient patterning of films of organic semiconductors and demonstrate the merit of the method on the high-solubility fullerene [6,6]-phenyl C61- butyric acid methyl ester (PCBM). The patterning technique is notably straightforward as it requires no photoresist material and encompasses only two steps: (i) exposure of select film areas to visible laser light during which the PCBM mononer is photochemically converted into a dimeric state, and (ii) development via solvent washing after which the nonexposed portions of the PCBM film are selectively removed. Importantly, the method is highly benign in that it leaves the electronic properties of the remaining patterned material intact, which is directly evidenced by the fact that we fabricate fully functional arrays of micrometersized field-effect transistors with patterned PCBM as the active material.

Ort, förlag, år, upplaga, sidor
Washington, DC, USA: American Chemical Society , 2009. Vol. 131, nr 11, s. 4006-4011
Nyckelord [en]
Thin-film transistors, field-effect transistors, plastic solar-cells, C-60 films, soft lithography, MDMO-PPV, devices, spectroscopy, absorption, deposition
Nationell ämneskategori
Atom- och molekylfysik och optik
Forskningsämne
fysik
Identifikatorer
URN: urn:nbn:se:umu:diva-22134DOI: 10.1021/ja807964xOAI: oai:DiVA.org:umu-22134DiVA, id: diva2:212834
Tillgänglig från: 2009-04-24 Skapad: 2009-04-24 Senast uppdaterad: 2018-06-08Bibliografiskt granskad
Ingår i avhandling
1. Photo-polymerization as a tool for engineering the active material in organic field-effect transistors
Öppna denna publikation i ny flik eller fönster >>Photo-polymerization as a tool for engineering the active material in organic field-effect transistors
2009 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

The emergence of organic semiconductors is exciting since it promises to open up for straightforward and low-cost fabrication of a wide range of efficient and novel electronic devices. However, in order for this promise to become reality it is critical that new and functional fabrication techniques are developed. This thesis demonstrates the conceptualization, development, realization and implementation of a particularly straightforward and scalable fabrication process: the photo-induced and resist-free imprint patterning technique.Initial experiments revealed that some members of a group of carbon-cage molecular semiconductors – termed fullerenes – can be photochemically modified into dimeric or polymeric structures during exposure to laser light, and, importantly, that the exposed fullerene material retains its good electron-transport property while its solubility in common organic solvents is drastically lowered. With this information at hand, it was possible to design and create well-defined patterns in a solution-deposited fullerene film by exposing selected film areas to laser light and then developing the entire film in a tuned developer solution. An electronically active fullerene pattern emerges at the locations defined by the incident laser beam, and the patterning technique was successfully utilized for the fabrication of arrays of efficient field-effect transistors.In a later stage, the capacity of the photo-induced and resist-free imprint technique was demonstrated to encompass the fabrication of ubiquitous and useful CMOS circuits. These are based on a combination of p-type and n-type transistors, and a blend between a p-type organic semiconductor and an n-type fullerene compound was designed so that the latter dominated. By solution-depositing the blend film on an array of transistor structures, exposing selected transistors to laser light, and then developing the entire transistor array in a developer solution, it was possible to establish a desired combination of (non-exposed) p-type transistors and (exposed) n-type transistors. We finally utilized this combination of transistors for the fabrication of a CMOS circuit in the form of well a-functional organic inverter stage.

Ort, förlag, år, upplaga, sidor
Umeå: Print & Media, 2009. s. 50
Nyckelord
Field-effect transistor, photo-polymerization, PCBM, C60, Fullerene
Nationell ämneskategori
Fysik
Forskningsämne
fasta tillståndets fysik
Identifikatorer
urn:nbn:se:umu:diva-22127 (URN)978-91-7264-779-4 (ISBN)
Disputation
2009-05-20, NA430, SE-90187 Umea, Umea, 13:00 (Engelska)
Opponent
Handledare
Tillgänglig från: 2009-04-24 Skapad: 2009-04-23 Senast uppdaterad: 2009-04-24Bibliografiskt granskad

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Wågberg, ThomasEdman, Ludvig

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