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Tuning the band gap and the nitrogen content in carbon nitride materials by high temperature treatment at high pressure
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2018 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 130, p. 170-177Article in journal (Refereed) Published
Abstract [en]

Carbon nitride (C-N) materials have been attracting great interest because of their extraordinary performance in photocatalysis and energy conversion. However, developing an effective strategy for achieving band-gap engineering of C-N materials to satisfy practical applications remains highly desired. Here we report an efficient way to tune the band gap and control the nitrogen stoichiometry in carbon nitride compounds by using high pressure and high temperature (HPHT) treatment. It is found that treating a g-C3N4 precursor at relatively low temperature (630oC and below) under pressure can efficiently narrow the band gap even down to the red light region (~600 nm), increase the crystallinity, and significantly improve the charge carrier separation efficiency (by two orders of magnitude), almost without changing their stoichiometry. When increasing the treatment temperature under pressure, nitrogen-doped graphene/graphite materials with weak ferromagnetism were obtained. We thus obtained C-N materials with tunable band gaps, ranging from semiconducting to metallic states. XPS measurements show that pyridinic nitrogen is preferentially eliminated under such HPHT conditions while graphitic nitrogen is preserved in the C-N network. Our results thus provide an efficient strategy for tuning the structure and physical properties of C-N materials for applications.

Place, publisher, year, edition, pages
Elsevier, 2018. Vol. 130, p. 170-177
Keywords [en]
Carbon nitride, high pressure, nitrogen stoichiometry, band gap, XPS, Raman scattering, X-ray diffraction
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:umu:diva-143916DOI: 10.1016/j.carbon.2017.12.115ISI: 000424889200020Scopus ID: 2-s2.0-85043384118OAI: oai:DiVA.org:umu-143916DiVA, id: diva2:1173919
Note

Supplementary information available at the journal website.

Available from: 2018-01-15 Created: 2018-01-15 Last updated: 2018-06-18Bibliographically approved

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The full text will be freely available from 2019-12-29 00:00
Available from 2019-12-29 00:00

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Sundqvist, Bertil

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CiteExportLink to record
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Citation style
  • apa
  • ieee
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