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Impurity-Controlled Crystal Growth in Low-Dimensional Bismuth Telluride
Umeå University, Faculty of Science and Technology, Department of Physics. Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States.
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2018 (English)In: Chemistry of Materials, ISSN 0897-4756, E-ISSN 1520-5002, Vol. 30, no 17, p. 6108-6115Article in journal (Refereed) Published
Abstract [en]

Topological insulators, such as layered Bi2Te3, exhibit extraordinary properties, manifesting profoundly only at nanoscale thicknesses. However, it has been challenging to synthesize these structures with controlled thicknesses. Here, control over the thickness of solvothermally grown Bi2Te3 nanosheets is demonstrated by manipulating the crystal growth through select and controlled impurity atom addition. By a comprehensive analysis of the growth mechanism and intentional addition of Fe impurity, we demonstrate that the nucleation and growth of few-layer nanosheets of Bi2Te3 can be stabilized in solution. Via optimization of the Fe concentration, nanosheets thinner than 6 nm, and as thin as 2 nm, can be synthesized. Such thicknesses are smaller than the anticipated critical thickness for the transition of topological insulators to the quantum spin Hall regime.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2018. Vol. 30, no 17, p. 6108-6115
National Category
Materials Chemistry Condensed Matter Physics
Identifiers
URN: urn:nbn:se:umu:diva-152406DOI: 10.1021/acs.chemmater.8b02548ISI: 000444792800035OAI: oai:DiVA.org:umu-152406DiVA, id: diva2:1253639
Funder
Swedish Research Council, 2015-06462Available from: 2018-10-05 Created: 2018-10-05 Last updated: 2018-10-05Bibliographically approved

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Sharifi, Tiva

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