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Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene
Umeå University, Faculty of Science and Technology, Department of Computing Science.
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2018 (English)In: Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, E-ISSN 1533-4899, Vol. 18, no 11, p. 7578-7583Article in journal (Refereed) Published
Abstract [en]

A thermal analysis of AlGaN/GaN high electron mobility transistors (HEMTs) with Graphene is investigated using Silvaco and Finite Element Method. Two thermal management solutions are adopted; first of all, graphene is used as dissipation material between SiC substrate and GaN buffer layer to reduce thermal boundary resistance of the device. At the same time, graphene is also used as a thermal spread material on the top of the source contacts to reduce thermal resistance of the device. The thermal analysis results show that the temperature rise of device adopting graphene decreases by 46.5% in transistors operating at 13.86 W/mm. Meanwhile, the thermal resistance of GaN HEMTs with graphene is 6.8 K/W, which is much lower than the device without graphene, which is 18.5 K/W. The thermal management solutions are useful for integration of large-scale graphene into practical devices for effective heat spreading in AlGaN/GaN HEMT.

Place, publisher, year, edition, pages
American Scientific Publishers, 2018. Vol. 18, no 11, p. 7578-7583
Keywords [en]
AlGaN/GaN, High-Electron-Mobility Transistors (HEMTs), Graphene, Thermal Management
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:umu:diva-152372DOI: 10.1166/jnn.2018.16080ISI: 000443946600045OAI: oai:DiVA.org:umu-152372DiVA, id: diva2:1253766
Available from: 2018-10-05 Created: 2018-10-05 Last updated: 2018-10-05Bibliographically approved

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Yan, Chunli

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