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Injection lasers fabricated from semiconducting polymers
Umeå University, Faculty of Science and Technology, Department of Physics.
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2004 (English)Patent (Other (popular science, discussion, etc.))
Abstract [en]

A solid state lasing structure comprising a field effect transistor in which source and drain electrodes are disposed on a semiconducting light emitting organic polymer forming an active layer on a gate whereby current between the source and drain electrodes defines and flows along a channel in the active layer to define a recombination and emission zone

Place, publisher, year, edition, pages
United States , 2004.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:umu:diva-6601OAI: oai:DiVA.org:umu-6601DiVA: diva2:146270
Patent
US 6828583 (2004-12-07)
Available from: 2007-12-15 Created: 2007-12-15 Last updated: 2011-10-24Bibliographically approved

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Edman, Ludvig

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