Injection lasers fabricated from semiconducting polymers
2004 (English)Patent (Other (popular science, discussion, etc.))
A solid state lasing structure comprising a field effect transistor in which source and drain electrodes are disposed on a semiconducting light emitting organic polymer forming an active layer on a gate whereby current between the source and drain electrodes defines and flows along a channel in the active layer to define a recombination and emission zone
Place, publisher, year, edition, pages
United States , 2004.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:umu:diva-6601OAI: oai:DiVA.org:umu-6601DiVA: diva2:146270
US 6828583 (2004-12-07)