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Absence of an insulator-metal transition in Rb4C60 up to 2 GPa
Umeå University, Faculty of Science and Technology, Department of Physics.
Umeå University, Faculty of Science and Technology, Department of Physics.
Umeå University, Faculty of Science and Technology, Department of Physics.
Umeå University, Faculty of Science and Technology, Department of Physics.
2008 (English)In: Physical Review B, ISSN 0163-1829, Vol. 77, no 8, 085434- p.Article in journal (Refereed) Published
Abstract [en]

We present the results of direct resistance measurements on Rb4C60 under pressures up to 2 GPa. At all pressures covered by this study and over the temperature range of 90–450 K Rb4C60 is a semiconductor with a weakly pressure dependent band gap near 0.7 eV. We do not observe the insulator-to-metal transition previously reported to occur below 1.2 GPa, although we cannot rule out the possibility that such a transition might occur at some significantly higher pressure. The measured resistivity is surprisingly low and is dominated by carriers excited over a 0.1 eV gap. Because the corresponding conductivity increases with deformation of the sample, we assign these states to structural or orientational defects. The known structural transformation below 0.5 GPa leads to a decrease in resistivity under high pressure, but the material remains semiconducting. A Rb6C60 control sample showed a similar behavior, also being a semiconductor under all conditions studied. At temperatures above 460 K, Rb was partially lost from our samples, resulting in metallization by a transformation into Rb3C60.

Place, publisher, year, edition, pages
2008. Vol. 77, no 8, 085434- p.
Keyword [en]
Fullerene, C60, fulleride, Rb3C60, Rb4C60, Rb6C60, high pressure, metal-insulator transition, phase transition, resistance, conductance, semiconductor, band gap, gap states, superconductivity, critical temperature, Raman spectroscopy, X-ray diffraction, susceptibility, NMR
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:umu:diva-9111DOI: 10.1103/PhysRevB.77.085434OAI: oai:DiVA.org:umu-9111DiVA: diva2:148782
Note

Also selected for the Virtual Journal of Nanoscale Science & Technology, volume 17, issue 11 (March 17, 2008).

Available from: 2008-03-17 Created: 2008-03-17 Last updated: 2015-09-28Bibliographically approved

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Iwasiewicz-Wabnig, AgnieszkaWågberg, ThomasMakarova, TatianaSundqvist, Bertil

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