Electrical resistance of Rb4C60 under pressure
2008 (English)In: The Journal of Physics and Chemistry of Solids, vol. 69, issues 5-6: Proceedings of the 14th International Symposium on Intercalation Compounds - ISIC 14, Amsterdam: Elsevier B.V. , 2008, 1218-1220 p.Conference paper (Refereed)
We report the results of direct in situ resistance measurements of Rb4C60 under high pressure up to 2 GPa, in the temperature range 90–400 K. The resistance changes smoothly with pressure and temperature without sharp anomalies, and all data sets can be fitted to the same theoretical semiconductor model. We find no signs of the insulator-to-metal transition previously reported in this range, but the fitted band gap decreases with pressure and such a transition may possibly take place above 5 GPa.
Place, publisher, year, edition, pages
Amsterdam: Elsevier B.V. , 2008. 1218-1220 p.
, Journal of Physics and Chemistry of Solids, ISSN 0022-3697 ; 69
Fullerenes, Rb4C60, resistance, resistivity, conductivity, semiconductor, band gap, high pressure, low temperature, high temperature
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:umu:diva-9675DOI: 10.1016/j.jpcs.2007.09.015OAI: oai:DiVA.org:umu-9675DiVA: diva2:149346