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Highly stable CsPbI3 perovskite quantum dots enabled by single SiO2 coating toward down-conversion light-emitting diodes
Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China.
Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China.
Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China.
Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China.
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2023 (English)In: Applied Sciences, E-ISSN 2076-3417, Vol. 13, no 13, article id 7529Article in journal (Refereed) Published
Abstract [en]

All-inorganic CsPbI3 perovskite quantum dots (PeQDs) have sparked widespread research due to their excellent optoelectronic properties and facile synthesis. However, attaining highly stable CsPbI3 perovskite quantum dots (PeQDs) against heat and polar solvents still remains a challenge and hinders any further practical application. Here, by exploiting (3-aminopropyl) triethoxysilane (APTES) as the sole silica (SiO2) precursor, we report a one-step in situ synthesis of single SiO2-coated CsPbI3 (SiO2-CsPbI3) PeQDs, namely that one SiO2 particle only contains one CsPbI3 PeQD particle. The obtained SiO2-CsPbI3 PeQDs are cubic in shape, have a more uniform size distribution, and possess narrow emission, with near unit photoluminescence quantum yields of up to 97.5%. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy confirm the formation of SiO2 through the hydrolysis of APTES on the CsPbI3 PeQDs surface. Furthermore, they have a significantly improved stability against storage, heat, and ethanol. By combining purple-emission GaN light-emitting diodes, the SiO2-CsPbI3 PeQDs were successfully employed as down-conversion emitters and exhibited considerable enhanced luminous performance and excellent stability, demonstrating their promising future in the practical application of solid-state lighting fields.

Place, publisher, year, edition, pages
MDPI, 2023. Vol. 13, no 13, article id 7529
Keywords [en]
CsPbI3, heat and polar stability, instability, perovskite quantum dots, photoluminescence, silica coating
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:umu:diva-212311DOI: 10.3390/app13137529ISI: 001031219300001Scopus ID: 2-s2.0-85164829009OAI: oai:DiVA.org:umu-212311DiVA, id: diva2:1784036
Funder
The Kempe Foundations, SMK1849.1The Kempe Foundations, SMK21-0015Bertil & Britt Svenssons Stiftelse för BelysningsteknikThe Swedish Foundation for International Cooperation in Research and Higher Education (STINT), 2019-8553Available from: 2023-07-25 Created: 2023-07-25 Last updated: 2025-04-24Bibliographically approved

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Wang, Jia

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