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Atom lithography with two-dimensional optical masks
Umeå University, Faculty of Science and Technology, Department of Physics.
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2004 (English)In: Applied physics. B, Lasers and optics (Print), ISSN 0946-2171, E-ISSN 1432-0649, Vol. 79, no 3, 279-283 p.Article in journal (Refereed) Published
Abstract [en]

With a two-dimensional (2D) optical mask at lambda=1083 nm, nanoscale patterns are created for the first time in an atom lithography process using metastable helium atoms. The internal energy of the atoms is used to locally damage a hydrophobic resist layer, which is removed in a wet etching process. Experiments have been performed with several polarizations for the optical mask, resulting in different intensity patterns, and corresponding nanoscale structures. The results for a linear polarized light field show an array of holes with a diameter of 260 nm, in agreement with a computed pattern. With a circularly polarized light field a line pattern is observed with a spacing of lambdaroot2=766 nm. Simulations taking into account many possible experimental imperfections can not explain this pattern.

Place, publisher, year, edition, pages
New York: Springer, 2004. Vol. 79, no 3, 279-283 p.
Keyword [en]
metastable helium-atoms, wave light-field, beam, nanolithography, nanofabrication, deposition, forces
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:umu:diva-19551DOI: 10.1007/s00340-004-1569-4ISI: 000222517700004OAI: oai:DiVA.org:umu-19551DiVA: diva2:202033
Available from: 2009-03-06 Created: 2009-03-06 Last updated: 2017-12-13Bibliographically approved

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Petra, Stefan JH
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