Pressure effect on electrical properties and photoluminescence spectra of solid C60 and C70 fullerenes
2001 (English)In: Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials: Proceedings of the NATO Advanced Research Workshop, Pingree Park, CO, USA, from 10-15 June 2001, Dordrecht: Springer/Kluwer , 2001, 483-491 p.Conference paper (Refereed)
Electrical resistivity of crystalline and disordered fullerite samples obtained by static high-pressure-high-temperature treatment of C-60 and C-70 at P = 12.5 GPa and T = 820-1500 K was investigated in the temperature range of 2.4-300 K, Room-temperature activation energy of charge carriers was found to be in the range 40-200 meV. T-3/2 and T-4 dependencies of conductivity versus temperature were revealed both in crystalline and disordered structures. Photoluminescence spectra of C-60 samples treated at P = 13 GPa. T = 770-1470 K show 50 nm short-wave length shift of characteristic 750 nm PL band.
Place, publisher, year, edition, pages
Dordrecht: Springer/Kluwer , 2001. 483-491 p.
, NATO Science Series II: Mathematics, Physics and Chemistry, ISSN 1568-2609 ; 48
Fullerenes, C60, C70, disordered, polymerization, resistivity, conductivity, eletrical transport properties, high pressure, high temperature, photoluminescence spectra
Condensed Matter Physics
Research subject Physics
IdentifiersURN: urn:nbn:se:umu:diva-20076ISBN: 978-1-4020-0160-4OAI: oai:DiVA.org:umu-20076DiVA: diva2:208083
Editors Hans D. Hochheimer, Bogdan Kuchta, Peter K. Dorhout, and Jeffery L. Yarger; invited conference paper2009-03-162009-03-162010-01-21