Facile fabrication of organic CMOS circuits via photo-induced imprinting of a single-layer blend
(English)Article in journal (Other academic) Submitted
Organic electronic circuits based on a combination of n- and p-type transistors (so-called CMOS circuits) are attractive, since they promise the realization of a manifold of versatile and low-cost electronic devises. Here, we report a novel photo-induced imprinting method, which allows for a particularly straightforward fabrication of highly functional organic CMOS circuits. A single-layer blend film, comprising a mixture of the n-type semiconductor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and the p-type semicondutor poly-3-hexylthiophene (P3HT) in a 3:1 mass ratio, was deposited from solution onto an array of transistor structures on a substrate. By exposing select film areas to laser light, the PCBM monomers were photo-chemically transformed into a low-solubility and high-mobility dimeric state. Thereafter, the entire film was developed by immersing the substrate into a developer solution, which selectively removed the non-exposed, and monomeric, PCBM. The end result was that the transistors in the exposed areas are n-type, as dimeric PCBM is the majority component, while the transistors in the non-exposed areas are p-type, as P3HT is the sole remaining material. We demonstrate the merit of the method by utilizing the combination of n-type and p-type transistors for the realization of CMOS inverters with a high gain of ~35.
organic electronics, field-effect transistor, CMOS, inverter, fullerene, PCBM, P3HT
IdentifiersURN: urn:nbn:se:umu:diva-22135OAI: oai:DiVA.org:umu-22135DiVA: diva2:212837