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Semimetallic and semiconductor properties of some superhard and ultrahard fullerites in the range 300-2 K
Umeå University, Faculty of Science and Technology, Department of Physics.
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2000 (English)In: Proceedings of the 5th IUMRS International Conference on Advanced Materials, Beijing 1999, Elsevier B.V. , 2000, 1009-1015 p.Conference paper, Published paper (Refereed)
Abstract [en]

Electrical resistivity and magnetoresistance were measured on samples with disordered structures synthesized from pure C60 and C70 at pressures in the range 8–12.5 GPa and temperatures of 900–1500 K. Different types of behaviour were observed: semimetallic, VRH and semiconducting, depending on the degree of disorder and the particular short-range order of the samples. A negative magnetoresistance was observed at T<10 K on samples with a semimetallic type of conductivity synthesized at 8 GPa pressure. The temperature dependence of resistivity in the sample with a disordered crystalline structure based on 3D-polymerized C60 molecules fits Mott's law for hopping conductivity. T3/2, T2 and T4 dependencies of conductivity are observed for samples with densities of 2.8 and 3.05 g/cm3 synthesized at a pressure of 12.5 GPa. The effect of hydrostatic pressure on the resistivity of cross-linked layered carbon structures obtained from C60 at P=8 GPa, T=1600 K was investigated up to 0.6 GPa at room temperature. An approximately linear decrease of resistivity was observed with a very small value of the derivative d ln ρ/dp=0.06 /GPa, which correlates with a very low compressibility of the material.

Place, publisher, year, edition, pages
Elsevier B.V. , 2000. 1009-1015 p.
Series
Journal of Physics and Chemistry of Solids, ISSN 0022-3697 ; 61, issue 7
Keyword [en]
Fullerenes, C60, high pressure synthesis, polymer, fullerene polymer, semimetal, semiconductor, variable range hopping, disorder, resistance, magnetoresistance, pressure dependence
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:umu:diva-23079DOI: 10.1016/S0022-3697(99)00356-XOAI: oai:DiVA.org:umu-23079DiVA: diva2:219595
Conference
The 5th IUMRS International Conference on Advanced Materials, Beijing 1999
Note

Editors: D. Zhu and Hans Kuzmany

Available from: 2009-05-28 Created: 2009-05-28 Last updated: 2013-02-04Bibliographically approved

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Edman, LudvigSundqvist, Bertil

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