The pressure dependence of of the electron-phonon interaction and the normal state resistivity
1981 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 24, no 1, 144-154 p.Article in journal (Refereed) Published
Accurate measurements of the electrical resistance as a function of temperature and pressure are reported for Sn, Zr, dhcp La, and V. These measurements cover a temperature region around room temperature and pressures up to 1.3 GPa. From these data, including also our previous measurements for Al and published results for Pb, the pressure dependence of d ρ / dT (the resistivity-temperature derivative) is obtained. This quantity is found to be a significant factor in the pressure dependence of the electron-phonon interaction parameter λ. For the nontransition metals the relative pressure dependence of d ρ / dT is much larger than the compressibility. Therefore the pressure dependence of the superconducting Tc is quantitatively well accounted for by the resistance data for these metals. For the transition metals the pressure dependence of d ρ / dT is relatively smaller and Tc(p) calculated from the resistance data is, at the best, only qualitatively correct. These differences are discussed. Estimates for the pressure dependence of the plasma frequency are obtained.
Place, publisher, year, edition, pages
American Physical Society , 1981. Vol. 24, no 1, 144-154 p.
Superconductivity, metals, electron-phonon interaction, pressure dependence, resistivity, tin, zirconium, lanthanum, vanadium, Sn, Zr, La, V
Condensed Matter Physics
Research subject Physics
IdentifiersURN: urn:nbn:se:umu:diva-23080DOI: 10.1103/PhysRevB.24.144OAI: oai:DiVA.org:umu-23080DiVA: diva2:219597