In-plane electrical resistivity of La2-xSrxCuO4 at constant volume
1995 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 51, no 9, 6111-6114 p.Article in journal (Refereed) Published
Literature data for the in-plane electrical resistivity ρ of single-crystal La2-xSrxCuO4 with 0.07 ≤x≤0.34 have been corrected to constant crystal volume V using literature data for the pVT properties and for the resistivity vs pressure p. The original data at constant p show the usual anomalies observed for ceramic high-transition-temperature superconductors, such as linearity of ρ to extremely high T at optimum doping and an upwards curvature (ρ∝T1.5) for overdoped material. After correction, the data for ρ at constant volume are linear in T for overdoped material only. We show that phonons cannot be ruled out as the major carrier scattering agent.
Place, publisher, year, edition, pages
1995. Vol. 51, no 9, 6111-6114 p.
High pressure, constant volume conditions, isochoric conditions, resistivity, high transition temperature superconductors, HTS, anisotropy, in-plane resistivity, overdoping
Condensed Matter Physics
Research subject Physics
IdentifiersURN: urn:nbn:se:umu:diva-26346DOI: 10.1103/PhysRevB.51.6111OAI: oai:DiVA.org:umu-26346DiVA: diva2:241961