umu.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Luminescent properties of GaN films grown on porous silicon substrate
Laboratoires des Mate´riaux Composites, Ce´ramiques et Polymeres, Faculte´ des Sciences de Sfax, Tunisia.
Unite´ physique desmate´riaux isolants et semi isolants, Institut Pre´paratoire aux e´tu des d’Inge´nieurs de Sfax.
Unite´ de recherche sur l’He´te´roe´pitaxie et Applications, Faculte´ des sciences de Monastir 5000, Tunisia.
Institute of Physics, Johannes Gutenberg University-Mainz.
Show others and affiliations
2010 (English)In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 130, 399-403 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2010. Vol. 130, 399-403 p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:umu:diva-50234DOI: 10.1016/j.jlumin.2009.10.003OAI: oai:DiVA.org:umu-50234DiVA: diva2:460848
Available from: 2011-12-01 Created: 2011-12-01 Last updated: 2017-12-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Salh, Roushdey

Search in DiVA

By author/editor
Salh, Roushdey
In the same journal
Journal of Luminescence
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 186 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf