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Luminescent properties of GaN films grown on porous silicon substrate
Laboratoires des Mate´riaux Composites, Ce´ramiques et Polymeres, Faculte´ des Sciences de Sfax, Tunisia.
Unite´ physique desmate´riaux isolants et semi isolants, Institut Pre´paratoire aux e´tu des d’Inge´nieurs de Sfax.
Unite´ de recherche sur l’He´te´roe´pitaxie et Applications, Faculte´ des sciences de Monastir 5000, Tunisia.
Institute of Physics, Johannes Gutenberg University-Mainz.
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2010 (English)In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 130, 399-403 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2010. Vol. 130, 399-403 p.
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Physical Sciences
URN: urn:nbn:se:umu:diva-50234DOI: 10.1016/j.jlumin.2009.10.003OAI: diva2:460848
Available from: 2011-12-01 Created: 2011-12-01 Last updated: 2012-04-11Bibliographically approved

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Salh, Roushdey
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