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Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate
Physics Department, University of Rostock, Universitatsplatz 3, D-1805 Rostock, Germany.
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2008 (English)In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 62, 515-519 p.Article in journal (Refereed) Published
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2008. Vol. 62, 515-519 p.
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Atom and Molecular Physics and Optics
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URN: urn:nbn:se:umu:diva-53978DOI: 10.1016/j.matlet.2007.05.079OAI: oai:DiVA.org:umu-53978DiVA: diva2:514709
Available from: 2012-04-12 Created: 2012-04-10 Last updated: 2017-12-07Bibliographically approved

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Salh, Roushdey

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