On the fabrication of crystalline C-60 nanorod transistors from solution
2012 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 23, no 34, 344015- p.Article in journal (Refereed) Published
Flexible and high-aspect-ratio C-60 nanorods are synthesized using a liquid-liquid interfacial precipitation process. As-grown nanorods are shown to exhibit a hexagonal close-packed single-crystal structure, with m-dichlorobenzene solvent molecules incorporated into the crystalline structure in a C-60:m-dichlorobenzene ratio of 3.2. An annealing step at 200 degrees C transforms the nanorods into a solvent-free face-centred-cubic polycrystalline structure. The nanorods are deposited onto field-effect transistor structures using two solvent-based techniques: drop-casting and dip-coating. We find that dip-coating deposition results in a preferred alignment of non-bundled nanorods and a satisfying transistor performance. The latter is quantified by the attainment of an electron mobility of 0.08 cm(2) V-1 s(-1) and an on/off ratio of >10(4) for a single-crystal nanorod transistor, fabricated with a solution-based and low-temperature process that is compatible with flexible substrates.
Place, publisher, year, edition, pages
Bristol: Institute of Physics Publishing (IOPP), 2012. Vol. 23, no 34, 344015- p.
IdentifiersURN: urn:nbn:se:umu:diva-60080DOI: 10.1088/0957-4484/23/34/344015ISI: 000307812000016OAI: oai:DiVA.org:umu-60080DiVA: diva2:559141