Low-temperature variation of magnetic order in a nonmagnetic n-Ge:As semiconductor in the vicinity of the metal-insulator phase transition
2013 (English)In: Journal of Experimental and Theoretical Physics, ISSN 1063-7761, E-ISSN 1090-6509, Vol. 116, no 5, 796-799 p.Article in journal (Refereed) Published
The phenomenon of the low-temperature transition from antiferro- to ferromagnetic ordering of impurity spins in a nonmagnetic compensated n-Ge:As semiconductor near the metal-insulator phase transformation has been experimentally observed. The effect is manifested by rather sharp changes in the spin density and g-factor in the electron spin resonance spectra. As the relative content of a compensating impurity (gallium) is reduced below 0.7, the transition temperature begins to decrease and, at a degree of compensation below 0.3, drops below the studied temperature range (i.e., below 2 K).
Place, publisher, year, edition, pages
MAIK Nauka/Interperiodica/Springer , 2013. Vol. 116, no 5, 796-799 p.
IdentifiersURN: urn:nbn:se:umu:diva-78458DOI: 10.1134/S1063776113050142ISI: 000320510800013OAI: oai:DiVA.org:umu-78458DiVA: diva2:637856
The article is based on a preliminary report delivered at the 36th Conference on Low-Temperature Physics (St. Petersburg, July 2–6, 2012).