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Characterization of ion-irradiation-induced defects in graphite by Raman and Atomic Force Microscopy
Umeå University, Faculty of Science and Technology, Department of Physics.
2013 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Graphite is an interesting prototype material for ion implantation studies because of the anisotropy in its physical and structural properties; In particular, due to the layered nature of the graphite lattice, the processes of amorphization and recrystallization (graphitization) of the implanted region are conceptually different from that observed in commonly studied materials. Since ion implantation provides a controlled method for the introduction of lattice defects which can be subsequently annealed, this technique provides fundamental information on the unique crystalline regrowth (graphitization)process of this highly anisotropic material. The structure of ion‐irradiated HOPG has also been studied, and drawing inspiration from this, the crystallite size is fundamental in these novel properties in carbon. The bombarded graphite (with H+ and He ions), diamagnetic graphite, were performed using a Renishaw Raman microscope with a 514.5 nm Ar‐ion laser. The work includes the following parts:

1. Raman spectroscopy (measurements, spectra treatment with Origin and LabFit program, interpretation based on available literature).

2. Atomic force microscopy, interpretation with the SPIP software.

3. TRIM software simulation ion tracks in the sample.

Place, publisher, year, edition, pages
National Category
Condensed Matter Physics
URN: urn:nbn:se:umu:diva-117144OAI: diva2:905526
Subject / course
Fysik D - examensarbete
Available from: 2016-02-26 Created: 2016-02-22 Last updated: 2016-02-26Bibliographically approved

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