Achieving Extreme Utilization of Excitons by an Efficient Sandwich-Type Emissive Layer Architecture for Reduced Efficiency Roll-Off and Improved Operational Stability in Organic Light-Emitting Diodes
2016 (English)In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 8, no 5, 3150-3159 p.Article in journal (Refereed) PublishedText
It has been demonstrated that the efficiency roll-off is generally caused by the accumulation of excitons or charge carriers, which is intimately related to the emissive layer (EML) architecture in organic light-emitting diodes (OLEDs). In this article, an efficient sandwich-type EML structure with a mixed-host EML sandwiched between two single-host EMLs was designed to eliminate this accumulation, thus simultaneously achieving high efficiency, low efficiency roll-off and good operational stability in the resulting OLEDs. The devices show excellent electroluminescence performances, realizing a maximum external quantum efficiency (EQE) of 24.6% with a maximum power efficiency of 105.6 lm W-1 and a maximum current efficiency of 93.5 cd A(-1). At the high brightness of 5 000 cd m(-2), they still remain as high as 23.3%, 71.1 lm W-1, and 88.3 cd A(-1), respectively. And, the device'lifetime is up to 2000 h at initial luminance of 1000 cd m(-2), which is significantly higher than that of compared devices with conventional EML structures. The improvement mechanism is systematically studied by the dependence of the exciton distribution in EML and the exciton quenching processes. It can be seen that the utilization of the efficient sandwich-type EML broadens the recombination zone width, thus greatly reducing the exciton quenching and increasing the probability of the exciton recombination. It is believed that the design concept, provides a new avenue for us to achieve high-performance OLEDs.
Place, publisher, year, edition, pages
American Chemical Society (ACS), 2016. Vol. 8, no 5, 3150-3159 p.
efficiency roll-off, operational stability, sandwich-type, organic light-emitting diodes, extreme ilization
Nano Technology Materials Engineering
IdentifiersURN: urn:nbn:se:umu:diva-118254DOI: 10.1021/acsami.5b10532ISI: 000370211400031PubMedID: 26828128OAI: oai:DiVA.org:umu-118254DiVA: diva2:912755