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  • 1. Ben Nasr, F.
    et al.
    Matoussi, A.
    Salh, Roushdey
    Physics department, University of Rostock, Universitatsplatz 3, D‐1805 Rostock, Germany .
    Boufaden, T.
    Guermazi, S.
    Fitting, H.-J.
    Eljani, B.
    Fakhfakh, Z.
    Theoretical and Experiment Study of Cathodoluminescence of  GaN films2007Ingår i: FUNDAMENTAL AND APPLIED SPECTROSCOPY: Second International Spectroscopy Conference, ISC 2007, American Institute of Physics (AIP), 2007, Vol. 25-28, s. 65-71Konferensbidrag (Refereegranskat)
  • 2. Ben Nasr, Férid
    et al.
    Matoussi, Adel
    Salh, Roushdey
    Institute of Physics, Johannes Gutenberg University of Mainz, Staudingerweg 7, 55099 Mainz, Germany.
    Guermazi, Samir
    Fitting, H.-J.
    Cathodoluminescence study of undoped GaN films: Experimental and Calculation2009Ingår i: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 41, s. 454-459Artikel i tidskrift (Refereegranskat)
  • 3. Fitting, H.-J.
    et al.
    Cornet, N.
    Salh, Roushdey
    Physics Department, University of Rostock, Universit¨atsplatz 3, D-18051 Rostock, Germany.
    Guerret-Piécourt, C.
    Goeuriot, D.
    von Czarnowski, A.
    Electron beam excitation in thin layered samples2007Ingår i: Journal of Electron Spectroscopy and Related Phenomena, ISSN 0368-2048, E-ISSN 1873-2526, Vol. 159, s. 46-52Artikel i tidskrift (Refereegranskat)
  • 4.
    Fitting, H-J
    et al.
    Physics Department, University of Rostock, Rostock, Germany.
    Fitting Kourkoutis, L
    Applied and Engineering Physics, Cornell University.
    Salh, Roushdey
    Physics Department, University of Rostock, Rostock, Germany.
    Kolesnikova, EV
    Ioffé Physicotechnical Institute, St. Petersburg.
    Zamoryanskaya, MV
    Ioffé Physicotechnical Institute, St. Petersburg.
    von Czarnowski, A
    Physics Department, University of Rostock, Rostock, Germany.
    Schmidt, B
    Research Center Rossendorf, Dresden.
    Silicon cluster aggregation in silica layers2010Ingår i: Solid State Phenomena, ISSN 1012-0394, E-ISSN 1662-9779, Vol. 156-158, s. 529-533Artikel i tidskrift (Refereegranskat)
  • 5.
    Fitting, H-J
    et al.
    Institute of Physics, University of Rostock, Rostock, Germany.
    Fitting Kourkoutis, L
    School of Applied and Engineering Physics, Cornell University.
    Salh, Roushdey
    Institute of Physics, University of Rostock, Rostock, Germany.
    Zamoryanskaya, MV
    Ioffe Physico-Technical Institute, St. Petersburg.
    Schmidt, B
    Research Center Rossendorf, Dresden.
    Silicon nanocluster aggregation in SiO2:Si layers2010Ingår i: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 207, nr 1, s. 117-123Artikel i tidskrift (Refereegranskat)
  • 6. Fitting, H.-J.
    et al.
    Fitting-Kourkoutis, L.
    Salh, Roushdey
    Physics Department, University of Rostock, Universitätsplatz 3, D-18051 Rostock, Germany.
    Schmidt, B.
    EFTEM EELS and Cathodoluminescence in Si-implanted SiO2 layers2009Ingår i: Microscopy and Microanalysis, ISSN 1431-9276, E-ISSN 1435-8115, Vol. 15, nr S2, s. 1104-1105Artikel i tidskrift (Refereegranskat)
  • 7. Fitting, H.-J.
    et al.
    Fitting-Kourkoutis, L.
    Salh, Roushdey
    Physics Department, University of Rostock, Universitätsplatz 3, D-18051 Rostock, Germany.
    Zamoryanskaya, M. V.
    EFTEM, EELS, and Cathodoluminescence of Si nanoclusters in silica2009Ingår i: Instrumentation and Methodology, Vol. 1, s. 129-130Artikel i tidskrift (Refereegranskat)
  • 8. Fitting, H.-J.
    et al.
    Salh, Roushdey
    Institute of Physics, University Rostock, Rostock, Germany.
    Barfels, T.
    Schmidt, B.
    Multimodal Luminescence Spectra of Ion-implanted Silica2005Ingår i: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 202, s. R142-R144Artikel i tidskrift (Refereegranskat)
  • 9. Fitting, H.-J.
    et al.
    Salh, Roushdey
    Physics Department, University of Rostock, Universitätsplatz 3, D-18051 Rostock, Germany.
    Fitting Kourkoutis, L.
    Cathodoluminescence of defects interstitial molecules and clusters in silica2007Ingår i: Microscopy and Microanalysis, ISSN 1431-9276, E-ISSN 1435-8115, Vol. 13, nr S02, s. 1378-1379Artikel i tidskrift (Refereegranskat)
  • 10. Fitting, H.-J.
    et al.
    Salh, Roushdey
    Physics Dept., Rostock University, Universitaetsplatz 3, D-18051 Rostock, Germany.
    Kourkoutis, L.
    Schmidt, B.
    Cluster growth and luminescence in ion-implanted silica2008Ingår i: EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany Volume 2: Materials Science / [ed] Silvia Richter and Alexander Schwedt, 2008, Vol. 2, s. 17-18Konferensbidrag (Refereegranskat)
  • 11. Fitting, H.-J.
    et al.
    Salh, Roushdey
    Institute of Physics, University of Rostock, Universitätsplatz 3, D-18051 Rostock, Germany.
    Schmidt, B.
    Multimodal electronic-vibronic spectra of luminescence in ion-implanted silica layers2007Ingår i: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 122-123, s. 743-746Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Thermally oxidized SiO2 layers of 100 and 500 nm thickness have been implanted by oxygen and sulfur ions with a dose of 3×1016 and 5×1016 ions/cm2, respectively, leading to an atomic dopant fraction of about 4 at.% at the half depth of the SiO2 layers. The cathodoluminescence spectra of oxygen and sulfur implanted SiO2 layers show besides characteristic bands a sharp and intensive multimodal structure beginning in the green region at 500 nm over the yellow-red region extending to the near IR measured up to 820 nm. The energy step differences of the sublevels amount on average 120 meV and indicate vibration associated electronic states, probably of O2-interstitial molecules, as we could demonstrate by a respective configuration coordinate model.

  • 12. Fitting, H.-J.
    et al.
    Salh, Roushdey
    Institute of Physics, University of Rostock, D-18051 Rostock, Germany.
    Schmidt, B.
    Multimodal Luminescence Spectra of Ion-implanted Silica2007Ingår i: Semiconductors, Vol. 41, s. 453-457Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The main luminescence bands in silica SiO2are the red luminescence R (650 nm, 1.9 eV) of thenon-bridging oxygen hole center, and the blue band B (460 nm, 2.7 eV) and ultraviolet luminescence UV (290 nm,4.3 eV), both commonly related to oxygen-deficient centers. In the present work, we will enhance or replaceeither the first or second constituent of SiO2, i.e., silicon or oxygen, isoelectronically by additional implantationof the respective ions. Thus, thermally oxidized SiO2layers have been implanted by different ions of theIV group (C, Si, Ge, Sn, Pb) and of the VI group (O, S, Se) with doses up to 5×1016cm–2, leading to an atomicdopant fraction of about 4 at % at the half depth of the SiO2layers. Very surprisingly, the cathodoluminescencespectra of oxygen- and sulfur-implanted SiO2layers show, besides the characteristic bands, a sharp and intensivemultimodal structure beginning at the green region at 500 nm up to the near infrared. The energy step differencesof the sublevels equal on average 120 meV, and indicate vibration associated electronic states, probablyof interstitial molecules.

  • 13. Fitting, H.-J.
    et al.
    Salh, Roushdey
    German Institute for Polymers (DKI), Department of Physics, Schlossgartenstrasse 6, D-64289 Darmstadt, Germany.
    Schmidt, B.
    Thermal decomposition and new luminescence bands in wet, dry, and additional oxygen implanted silica layers2008Ingår i: Journal of Non-Crystalline Solids, ISSN 0022-3093, E-ISSN 1873-4812, Vol. 354, s. 1697-1702Artikel i tidskrift (Refereegranskat)
  • 14. Fitting, H.-J.
    et al.
    Ziems, T.
    Salh, Roushdey
    Physics Department, University of Rostock, Rostock, Germany.
    von Czarnowski, A.
    Schmidt, B.
    Luminescent Defect Dynamics in Amorphous SiO2:H2005Ingår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 2, s. 693-698Artikel i tidskrift (Refereegranskat)
  • 15. Fitting, H.-J.
    et al.
    Ziems, T.
    Salh, Roushdey
    Institute of Physics, Rostock University, Rostock, Germany.
    Zamoryanskaya, M. V.
    Kolesnikova, K. V.
    Schmidt, B.
    von Czarnowski, A.
    Cathodoluminescence of wet, dry and hydrogen-implanted silica films2005Ingår i: Journal of Non-Crystalline Solids, ISSN 0022-3093, E-ISSN 1873-4812, Vol. 351, s. 2251-2262Artikel i tidskrift (Refereegranskat)
  • 16. Grimm, Alejandro
    et al.
    Etula, Jarkko
    Salh, Roushdey
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Kalén, Gunnar
    Segerström, Markus
    Brücher, Jörg
    Söderberg, Christer
    Soukup, David
    Pfeifer, Christoph
    Larsson, Sylvia H.
    Slagging and fouling characteristics during co-combustion of Scots pine bark with low-temperature dried pulp and paper mill chemical sludge2019Ingår i: Fuel processing technology, ISSN 0378-3820, E-ISSN 1873-7188, Vol. 193, s. 282-294Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    This paper shows how chemical sludge (CS) generated during wastewater treatment at a paperboard mill can be quickly dried at low-temperature and employed in bark-fired boilers to reduce slagging and corrosion problems. By using a cyclone-dryer operated at an inlet-air velocity of 110 m/s and a temperature of 90 degrees C, the dry-matter content of CS was increased from approximately 19 to 82%. The residence time of CS inside the cyclone was approximately 2 s when using the inlet-air velocity mentioned above. Disaggregation of the feedstock caused by collisions with the cyclone wall and between particles played a crucial role in enhancing the efficiency of heat and mass transfer. Three co-pelletized mixtures of Scots pine bark (SPB) and dried-CS were combusted in a 40 kW fixed-bed burner. Flue gas analysis was performed with a gas analyser. Coarse and fine ash were analysed by SEM-EDS and XRD. NO,, and SO2 emissions increased with increasing amount of CS in the mixtures. Mono combustion of SPB resulted in a large quantity of slag (i.e., molten ash) with a high degree of sintering (i.e., hardness of the slag), and ash deposits formed on heat transfer surfaces were rich in K2SO4 and KCI. Mixtures of SPB and CS were less prone to slagging, and the amount of alkali chloride in the deposits was reduced in favour of alkali sulphate formation.

  • 17.
    Matoussi, A
    et al.
    Laboratoires des Mate´riaux Composites, Ce´ramiques et Polymeres, Faculte´ des Sciences de Sfax, Tunisia.
    Ben Nasr, F
    Unite´ physique desmate´riaux isolants et semi isolants, Institut Pre´paratoire aux e´tu des d’Inge´nieurs de Sfax.
    Boufaden, T
    Unite´ de recherche sur l’He´te´roe´pitaxie et Applications, Faculte´ des sciences de Monastir 5000, Tunisia.
    Salh, Roushdey
    Institute of Physics, Johannes Gutenberg University-Mainz.
    Fakhfakh, Z
    Laboratoires des Mate´riaux Composites, Ce´ramiques et Polymeres, Faculte´ des Sciences de Sfax, Tunisia.
    Guermazi, S
    Unite´ physique desmate´riaux isolants et semi isolants, Institut Pre´paratoire aux e´tu des d’Inge´nieurs de Sfax.
    ElJani, B
    Unite´ de recherche sur l’He´te´roe´pitaxie et Applications, Faculte´ des sciences de Monastir 5000, Tunisia.
    Fitting, H-J
    Institute of Physics, University of Rostock.
    Luminescent properties of GaN films grown on porous silicon substrate2010Ingår i: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 130, s. 399-403Artikel i tidskrift (Refereegranskat)
  • 18. Matoussi, A.
    et al.
    Ben Nasr, F.
    Salh, Roushdey
    Physics Department, University of Rostock, Universitatsplatz 3, D-1805 Rostock, Germany.
    Boufaden, T.
    Guermazi, S.
    Fitting, H.-J.
    Eljani, B.
    Fakhfakh, Z.
    Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate2008Ingår i: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 62, s. 515-519Artikel i tidskrift (Refereegranskat)
  • 19. Pustovarov, V. A.
    et al.
    Zatsepin, A. F.
    Kortov, V. S.
    Schmidt, B.
    Salh, Roushdey
    Physics Department, University of Rostock, Universitätsplatz 3, D-18051 Rostock, Germany.
    Fitting, H.-J.
    Time-resolved VUV luminescence spectroscopy  of SiO2-layers implanted with Ge ions2005Ingår i: HASYLAB, Annual Report, Vol. Part I, s. 707-708Artikel i tidskrift (Refereegranskat)
  • 20.
    Salh, Roushdey
    Institute of Physics, University of Rostock, Rostock, Germany.
    Concentration and annealing effects on luminescence properties of ion implanted silica layers2011Ingår i: Journal of Atomic, Molecular, and Optical Physics, ISSN 1687-9228, Vol. 2011, s. 326368-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The development of optoelectronic or even photonic devices based on silicon technology is still a great challenge. Silicon and itsoxide do not possess direct optical transitions and, therefore, are not luminescent. The remaining weak light emission is based onintrinsic and extrinsic defect luminescence. Thus the investigations are extended to ion implantation into silica layers, mainly onover-stoichiometric injection or isoelectronic substitution of both the constituents silicon or oxygen, that is, by ions of the groupIV (C, Si, Ge, Sn, Pb) or the group VI (O, S, Se). The samples have been used were 500nm thick thermally grown amorphous SiO2layers, wet oxidized at 1100◦C on a crystalline Si substrate. The ion implantations were performed with different energies but allwith a uniformdose of 5×1016 ions/cm2. Such implantations produce new luminescence bands, partially with electronic-vibronictransitions and related multimodal spectra. Special interest should be directed to lowdimension nanocluster formation in silicalayers. Implantations of group IV elements show a general increase of the luminescence in the violet-blue region and implantationsof group VI elements lead to an increase in the yellow-red spectral region. Comparing cathodoluminescence, photoluminescence,and electroluminescence still too small luminescence quantum yields are obtained.

  • 21.
    Salh, Roushdey
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Defect related luminescence in silicon dioxide network: a review2011Ingår i: Crystalline Silicon: Properties and Uses / [ed] Sukumar Basu, Rijeka: InTech , 2011, s. 135-172Kapitel i bok, del av antologi (Refereegranskat)
  • 22.
    Salh, Roushdey
    Institute of Physics, University of Rostock, Rostock, Germany.
    Nucleation kinetics in deionized charged colloidal suspension2011Ingår i: Journal of Non-Crystalline Solids, ISSN 0022-3093, E-ISSN 1873-4812, Vol. 357, s. 1044-1050Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A systematic experimental study on the nucleation, crystallization and crystal-growth of one-componentcharged colloidal particles (122 nm diluted in pure water with densities between 0.5 μm−3bnpb5 μm−3) ispresent by means of time resolved static light scattering spectroscopy revealing the heterogeneousand homogenous nature of the crystallization. The interactions between the charged colloidal particles aresufficiently strong to cause crystallization which described in terms of Debye-Hückel approximation. Crystallization starts always with the formation of compressed structurally heterogeneous precursordomains. The results show that the heterogeneous nucleation at the cell walls starts simultaneously with thehomogeneous bulk nucleation and the rate density of the heterogeneous nucleation appears slightly higher. Ithas been also found that the overall crystallization consists of at least a two-step nucleation process involvingformation of early stage nuclei or crystal precursor then followed by the main crystallization. The inductiontime, the number density of nuclei and the growth rate of crystals, is strongly dependent on particleconcentration and on whether the nucleation are homogeneous in cell center or heterogeneous on cell walls.

  • 23.
    Salh, Roushdey
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Silicon nanocluster in silicon dioxide: Cathodoluminescence, energy dispersive X-ray analysis, infrared spectroscopy studies2011Ingår i: Crystalline Silicon: Properties and Uses / [ed] Sukumar Basu, Rijeka: InTech , 2011, s. 173-218Kapitel i bok, del av antologi (Refereegranskat)
  • 24.
    Salh, Roushdey
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Spectroscopic properties of HALS doped polycarbonate by fluorescence spectroscopy2013Ingår i: Physical Review & Research International, ISSN 2231-1815, Vol. 3, nr 2, s. 42-54Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The fluorescence and fluorescence excitation spectra of pure and doped polycarbonate (PC) depending on hindered-amine light stabilizers (HALS: Tinuvin 770 and Tinuvin 123) concentration and different processing conditions have been studied. Non-processed PC has no emission band in the visible range but processed PC with additives show visible fluorescence bands between 400–470 nm. It suggested that PC undergoes a kind of degradation process which lead to the fluorescence emission caused by the transitions from the new distortion-related localized states (defect states) created by processing and the additives. Such defects lead also to the emergence of a new band in the excitation and emission spectra at lower energies, where the symmetry of the bands break near. The intensity of these bands drastically depends on the sample treatment where the luminescence intensity quantitatively characterizes the concentration of defect radicals. An increase in screw speed resulted in an increase in specific mechanical energy (SME), higher SME led to a remarkable macromolecular degradation.

  • 25.
    Salh, Roushdey
    et al.
    Institute of Physics, University of Rostock, Universitätsplatz 3, 18051 Rostock, Germany.
    Fitting, H.-J.
    Mechanism of Radiation-Induced defects in SiO2: The Role of Hydrogen2007Ingår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 4, s. 901-904Artikel i tidskrift (Refereegranskat)
  • 26.
    Salh, Roushdey
    et al.
    Institute of Physics, University of Rostock, Universitätsplatz 3, D-18051 Rostock, Germany.
    Fitting Kourkoutis, L.
    Schmidt, B.
    Fitting, H.-J.
    Cathodoluminescence of ion-implanted silica layers2007Ingår i: Microscopy and Microanalysis, ISSN 1431-9276, E-ISSN 1435-8115, Vol. 13, nr S03, s. 328-329Artikel i tidskrift (Refereegranskat)
  • 27.
    Salh, Roushdey
    et al.
    Institute of Physics, University of Rostock, Universitätsplatz 3, 18051 Rostock, Germany.
    Fitting Kourkoutis, L.
    Schmidt, B.
    Fitting, H.-J.
    Luminescence of isoelectronically ion-implanted SiO2 layers2007Ingår i: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 204, s. 3132-3144Artikel i tidskrift (Refereegranskat)
  • 28.
    Salh, Roushdey
    et al.
    Institute of Physics, University of Rostock, D-18051 Rostock, Germany.
    Fitting, L.
    Kolesnikova, E. V.
    Sitnikova, A. A.
    Zamoryanskaya, M. V.
    Schmidt, B.
    Fitting, H.-J.
    Si and Ge Nanocluster Formation in Silica Matrix2007Ingår i: Semiconductors, Vol. 41, s. 397-402Artikel i tidskrift (Refereegranskat)
  • 29.
    Salh, Roushdey
    et al.
    Physics Department, University of Rostock, Universitätsplatz 3, D-18051 Rostock, Germany.
    Fitting, Lena
    Fitting, H.-J.
    Cathodoluminescence of Ge-clusters in silica layers2006Ingår i: Microscopy and Microanalysis, ISSN 1431-9276, E-ISSN 1435-8115, Vol. 12, nr S02, s. 1532-1533Artikel i tidskrift (Refereegranskat)
  • 30.
    Salh, Roushdey
    et al.
    Institute of Physics, University of Rostock, Universitaetsplatz 3, D-18051 Rostock, Germany.
    Kourkoutis, L.
    Zamoryanskaya, M. V.
    Schmidt, B.
    Fitting, H.-J.
    Ion implantation and cluster formation in silica2009Ingår i: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 45, s. 362-368Artikel i tidskrift (Refereegranskat)
  • 31.
    Salh, Roushdey
    et al.
    Institute of Physics, University of Rostock, Universitaetsplatz 3, D-18051 Rostock, Germany.
    Kourkoutis, L.
    Zamoryanskaya, M. V.
    Schmidt, B.
    Fitting, H.-J.
    Ion implantation, luminescence, and cluster growth in silica layers2009Ingår i: Journal of Non-Crystalline Solids, ISSN 0022-3093, E-ISSN 1873-4812, Vol. 355, s. 1107-1110Artikel i tidskrift (Refereegranskat)
  • 32.
    Salh, Roushdey
    et al.
    Institue of Physics, University of Rostock, Universitaetsplatz 3, D-18051 Rostock, Germany.
    Kourkoutis, L.
    Zamoryanskaya, M. V.
    Schmidt, B.
    Fitting, H.-J.
    Luminescence and Si and Ge nanocluster formation in silica2009Ingår i: Physics Procedia, Vol. 2, s. 467-478Artikel i tidskrift (Refereegranskat)
  • 33.
    Salh, Roushdey
    et al.
    Institute of Physics, Rostock University, Rostock, Germany.
    Schmidt, B.
    Fitting, H.-J.
    Multiplet luminescence of sulfur implanted silica – SiO2:S2005Ingår i: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 202, s. R53-R55Artikel i tidskrift (Refereegranskat)
  • 34.
    Salh, Roushdey
    et al.
    Institute of Physics, University of Rostock, Universitätsplatz 3, D-18051 Rostock, Germany.
    von Czarnowski, A.
    Fitting, H.-J.
    Cathodoluminescence of non-stoichiometric silica: The role of oxygen2007Ingår i: Journal of Non-Crystalline Solids, ISSN 0022-3093, E-ISSN 1873-4812, Vol. 353, s. 546-549Artikel i tidskrift (Refereegranskat)
  • 35.
    Salh, Roushdey
    et al.
    Physics Department, University of Rostock, Universitätsplatz 3, 18051 Rostock, Germany.
    von Czarnowski, A.
    Fitting, H.-J.
    Electron Beam Induced Defects in Ge-implanted SiO2 Layers2005Ingår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 2, s. 580-583Artikel i tidskrift (Refereegranskat)
  • 36.
    Salh, Roushdey
    et al.
    Institute of Physics, University of Rostock, Universitätsplatz 3, 18051 Rostock, Germany.
    von Czarnowski, A.
    Zamoryanskaya, M. V.
    Kolesnikova, E. V.
    Fitting, H.-J.
    Cathodoluminescence of SiOx under-stoichiometric silica layers2006Ingår i: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 203, s. 2049-2057Artikel i tidskrift (Refereegranskat)
  • 37.
    Smijesh, N.
    et al.
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Zhang, X.
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Fischer, Peter
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Muschet, Alexander
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Salh, Roushdey
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Tajalli, A.
    Morgner, U.
    Veisz, Laszlo
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Contrast improvement of sub-4 fs laser pulses using nonlinear elliptical polarization rotation2019Ingår i: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 44, nr 16, s. 4028-4031Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Temporal-intensity contrast is crucial in intense laser-matter interaction to circumvent the undesirable expansion of steep high-density plasma prior to the interaction with the main pulse. Nonlinear elliptical polarization rotation in an argon filled hollow-core fiber is used here for cleaning pedestals/satellite pulses of a chirped-pulse-amplifier based Ti: Sapphire laser. This source provides similar to 35 mu J energy and sub-4-fs duration, and the process has >50% internal efficiency, more than the most commonly used pulse cleaning methods. Further, the contrast is improved by 3 orders of magnitude when measured after amplifying the pulses to 16 TW using non-collinear optical parametric chirped pulse amplification with a prospect to even further enhancement.

  • 38. Wette, Patrick
    et al.
    Engelbrecht, Andreas
    Salh, Roushdey
    Institut f¨ur Physik, Johannes Gutenberg-Universität, Staudinger Weg 7, D-55128 Mainz, Germany.
    Klassen, Ina
    Menke, Dirk
    Herlach, Dieter M.
    Roth, Stephan V.
    Schöpe, Hans Joachim
    Competition between heterogeneous and homogeneous nucleation near a flat wall2009Ingår i: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 21, nr 46, s. 464115-Artikel i tidskrift (Refereegranskat)
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