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2024 (English)In: ACS Omega, E-ISSN 2470-1343, Vol. 9, no 18, p. 20623-20628Article in journal (Refereed) Published
Abstract [en]
Metal-assisted chemical etching (MACE) is a cheap and scalable method that is commonly used to obtain silicon nano- or microwires but lacks spatial control. Herein, we present a synthesis method for producing vertical and highly periodic silicon microwires, using displacement Talbot lithography before wet etching with MACE. The functionalized periodic silicon microwires show 65% higher PEC performance and 2.3 mA/cm2 higher net photocurrent at 0 V compared to functionalized, randomly distributed microwires obtained by conventional MACE at the same potentials.
Place, publisher, year, edition, pages
American Chemical Society (ACS), 2024
National Category
Materials Chemistry
Identifiers
urn:nbn:se:umu:diva-224249 (URN)10.1021/acsomega.4c03039 (DOI)001227811900001 ()2-s2.0-85191880373 (Scopus ID)
Funder
The Kempe Foundations, JCK3140Swedish Research Council, 2020-04995Swedish Energy Agency, 50709-1Swedish Research Council, 2021-05207Swedish Research Council, 2021-04629
2024-05-152024-05-152025-04-24Bibliographically approved