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Impurity-Controlled Crystal Growth in Low-Dimensional Bismuth Telluride
Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik. Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States.
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2018 (engelsk)Inngår i: Chemistry of Materials, ISSN 0897-4756, E-ISSN 1520-5002, Vol. 30, nr 17, s. 6108-6115Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Topological insulators, such as layered Bi2Te3, exhibit extraordinary properties, manifesting profoundly only at nanoscale thicknesses. However, it has been challenging to synthesize these structures with controlled thicknesses. Here, control over the thickness of solvothermally grown Bi2Te3 nanosheets is demonstrated by manipulating the crystal growth through select and controlled impurity atom addition. By a comprehensive analysis of the growth mechanism and intentional addition of Fe impurity, we demonstrate that the nucleation and growth of few-layer nanosheets of Bi2Te3 can be stabilized in solution. Via optimization of the Fe concentration, nanosheets thinner than 6 nm, and as thin as 2 nm, can be synthesized. Such thicknesses are smaller than the anticipated critical thickness for the transition of topological insulators to the quantum spin Hall regime.

sted, utgiver, år, opplag, sider
American Chemical Society (ACS), 2018. Vol. 30, nr 17, s. 6108-6115
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Identifikatorer
URN: urn:nbn:se:umu:diva-152406DOI: 10.1021/acs.chemmater.8b02548ISI: 000444792800035Scopus ID: 2-s2.0-85052320151OAI: oai:DiVA.org:umu-152406DiVA, id: diva2:1253639
Forskningsfinansiär
Swedish Research Council, 2015-06462Tilgjengelig fra: 2018-10-05 Laget: 2018-10-05 Sist oppdatert: 2023-03-24bibliografisk kontrollert

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