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Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors
2010 (English)In: 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010) - Digest of Papers, 2010, p. 41-44Conference paper, Published paper (Refereed)
Abstract [en]

Integration possibilities of BaxSr1-xTiO3 (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO2/AlN Bragg reflectors deposited on a high resistivity silicon substrate are considered. SiO2/AlN reflectors withstand the high deposition temperature (>600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits. © 2010 IEEE.

Place, publisher, year, edition, pages
2010. p. 41-44
Keywords [en]
Acoustic Bragg reflector ferroelectric, FBAR, Induced piezoelectric effect, Si-integration, TFBAR
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:umu:diva-140839OAI: oai:DiVA.org:umu-140839DiVA, id: diva2:1150783
Conference
SiRF 2010, New Orleans, LA, USA
Available from: 2017-10-19 Created: 2017-10-19 Last updated: 2018-06-09

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Berge, John

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